展开左侧菜单栏
Site Map
About US
Who We are What we do
NEWS
Company NEWS Industry NEWS
Products
Three-phase
ASIC Series
Single-phase
ASIC Series
Gate Driver Series MOSFET Series MCU Series IPM Series
Support
Consumers electronic Electric tools Sports & travel gadget IT and Communication equipment Robotics Industry and automobile
Downloads
Development Kit Data Manual Application Manual Videos
R&D
Our Technology Typical Applications Technical Document
Contact
Contact Us Advisory
EMD7N60P5
Description
EMD7N60P5, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220FP, which accords with the RoHS standard.
Features
■Fast body diode eliminates the need for external diode in ZVS applications.
■Lower gate charge results in simpler drive requirements
■Higher gate voltage threshold offers improved noise immunity
■Low on-resistance
■RoHS compliant
Package
TO-220FP
Datasheet
-